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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product specification 2003 Feb 20 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor FEATURES * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain hFE at high IC * High efficiency leading to reduced heat generation * Reduced printed-circuit board area requirements. APPLICATIONS * Power management: - Complementary MOSFET driver - Dual supply line switching. * Peripheral driver: - Half and full bridge motor drivers - Multi-phase stepper motor driver. DESCRIPTION NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) plastic package. MARKING TYPE NUMBER PBSS4240DPN MARKING CODE M3 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector VCEO IC ICRP ICM RCEsat emitter-collector voltage QUICK REFERENCE DATA PBSS4240DPN MAX. SYMBOL PARAMETER NPN PNP 40 1.35 2 3 200 -40 -1.1 -2 -3 260 V A A A m UNIT collector current (DC) repetitive peak collector current peak collector current equivalent on-resistance DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 6 handbook, halfpage 5 4 6 5 4 TR2 TR1 1 Top view 2 3 MAM445 1 2 3 Fig.1 Simplified outline SOT457 (SC-74) and symbol. 2003 Feb 20 2 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS - - - - - - note 1 single peak - - - - Tamb 25 C; note 2 Tamb 25 C; note 3 Tamb 25 C; note 1 Tstg Tj Tamb Per device Ptot Notes total power dissipation Tamb 25 C; note 2 - storage temperature junction temperature operating ambient temperature - - - -65 - -65 PBSS4240DPN MIN. MAX. UNIT Per transistor unless otherwise specified; for the PNP transistor with negative polarity VCBO VCEO VEBO IC collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) NPN PNP ICRP ICM IB IBM Ptot repetitive peak collector current peak collector current base current (DC) peak base current total power dissipation open emitter open base open collector 40 40 5 1.35 -1.1 2 3 300 1 370 310 1.1 +150 150 +150 V V V A A A A mA A mW mW W C C C mW 600 1. Operated under pulsed conditions: duty cycle 20%; pulse width tp 10 ms; mounting pad for collector standard footprint. 2. Device mounted on a printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board; single-sided copper; tinplated; standard footprint. THERMAL CHARACTERISTICS SYMBOL Per transistor Rth j-a thermal resistance from junction to ambient in free air; note 1 in free air; note 2 340 110 K/W K/W PARAMETER CONDITIONS VALUE UNIT Notes 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 2. Operated under pulsed conditions: pulse width tp 10 ms; duty cycle 0.20; mounting pad for collector standard footprint. 2003 Feb 20 3 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. - - - - 300 150 - PBSS4240DPN TYP. - - - - - - - MAX. UNIT Per transistor unless otherwise specified; for the PNP transistor with negative polarity ICBO ICEO IEBO hFE fT Cc TR1 (NPN) hFE DC current gain VCE = 5 V; IC = 500 mA VCE = 5 V; IC = 1 A VCE = 5 V; IC = 2 A; note 1 VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA IC = 2 A; IB = 200 mA; note 1 VBEsat VBEon RCEsat TR2 (PNP) hFE DC current gain VCE = -5 V; IC = -100 mA VCE = -5 V; IC = -500 mA VCE = -5 V; IC = -1 A VCE = -5 V; IC = -2 A; note 1 VCEsat saturation voltage IC = -100 mA; IB = -1 mA IC = -500 mA; IB = -50 mA IC = -1 A; IB = -100 mA IC = -2 A; IB = -200 mA; note 1 VBEsat VBEon RCEsat Note 1. Pulse test: tp 300 s; 0.02. saturation voltage base-emitter turn-on voltage equivalent on-resistance IC = -1 A; IB = -50 mA VCE = -5 V; IC = -1 A IC = -1 A; IB = -100 mA; note 1 300 250 160 50 - - - - - - - - - - - -90 -100 -180 -400 - - - 800 - - - -120 -145 -260 -530 -1.1 -1 260 mV mV mV mV V V m base-emitter saturation voltage base-emitter turn-on voltage equivalent on-resistance IC = 1 A; IB = 100 mA VCE = 5 V; IC = 1 A IC = 1 A; IB = 100 mA 300 200 75 - - - - - - - - - - 60 80 150 300 - - - 900 - - 75 100 200 400 1.2 1.1 200 mV mV mV mV V V m collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain transition frequency collector capacitance VCB = 40 V; IE = 0 VCB = 40 V; IE = 0; Tj = 150 C VCE = 30 V; IB = 0 VEB = 5 V; IC = 0 VCE = 5 V; IC = 1 mA IC = 50 mA; VCE = 10 V; f = 100 MHz VCB = 10 V; IE = Ie = 0; f = 1 MHz 100 50 100 100 - - 12 MHz pF nA A nA nA 2003 Feb 20 4 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor PBSS4240DPN handbook, halfpage 800 MHC471 handbook, halfpage 1.2 MHC472 hFE (1) VBE (V) (1) 600 0.8 (2) (2) 400 (3) (3) 0.4 200 0 10-1 1 10 102 103 104 IC (mA) 0 10-1 1 10 102 103 104 IC (mA) TR1 (NPN); VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. TR1 (NPN); VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. 103 handbook, halfpage VCEsat (mV) MHC473 handbook, halfpage 1.2 MHC474 VBEsat (V) 1 (1) 0.8 102 (1) (2) (3) (3) (2) 0.6 0.4 10 10-1 1 10 102 103 104 IC (mA) 0.2 10-1 1 10 102 103 104 IC (mA) TR1 (NPN); IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. TR1 (NPN); IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2003 Feb 20 5 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor PBSS4240DPN handbook, halfpage 2 MHC475 IC (A) (1) (2) (3) (4) (5) (6) (7) (8) (9) 103 handbook, halfpage RCEsat () 102 MHC476 1.6 1.2 10 0.8 (10) 1 0.4 (1) (3) (2) 0 0 0.4 0.8 1.2 1.6 2 VCE (V) 10-1 10-1 1 10 102 103 104 IC (mA) TR1 (NPN); Tamb = 25 C. (1) (2) (3) (4) IB = 30 mA. IB = 27 mA. IB = 24 mA. IB = 21 mA. (5) (6) (7) (8) IB = 18 mA. IB = 15 mA. IB = 12 mA. IB = 9 mA. (9) IB = 6 mA. (10) IB = 3 mA. TR1 (NPN); IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.7 Fig.6 Collector current as a function of collector-emitter voltage; typical values. Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2003 Feb 20 6 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor PBSS4240DPN handbook, halfpage 1000 MHC464 handbook, halfpage -1.2 MHC465 hFE 800 (1) VBE (V) (1) -0.8 (2) 600 400 (2) (3) -0.4 (3) 200 0 -10-1 -1 -10 -102 -103 -104 IC (mA) 0 -10-1 -1 -10 -102 -103 -104 IC (mA) TR2 (PNP); VCE = -5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. TR2 (PNP); VCE = -5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.8 DC current gain as a function of collector current; typical values. Fig.9 Base-emitter voltage as a function of collector current; typical values. -103 handbook, halfpage VCEsat (mV) -102 MHC466 handbook, halfpage -1.2 MHC467 VBEsat (V) -1 (1) -0.8 (1) (2) (2) -10 (3) -0.6 (3) -0.4 -1 -10-1 -1 -10 -102 -103 -104 IC (mA) -0.2 -10-1 -1 -10 -102 -103 -104 IC (mA) TR2 (PNP); IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. TR2 (PNP); IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. 2003 Feb 20 7 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor PBSS4240DPN handbook, halfpage -1.2 IC (A) -0.8 MHC468 handbook, halfpage (4) (3) (2) (1) -2.4 IC (A) -2 MHC469 (1) (2) (3) (4) (5) (6) (7) (8) (9) (5) (6) (7) (8) -1.6 -1.2 -0.8 -0.4 -0.4 (9) (10) (10) 0 0 -0.4 -0.8 -1.2 -2 -1.4 VCE (V) 0 0 -0.4 -0.8 -1.2 -1.6 -2 VCE (V) TR2 (PNP); Tamb = 25 C. (1) (2) (3) (4) IB = -7 mA. IB = -6.3 mA. IB = -5.6 mA. IB = -4.9 mA. (5) (6) (7) (8) IB = -4.2 mA. IB = -3.5 mA. IB = -2.8 mA. IB = -2.1 mA. (9) IB = -1.4 mA. (10) IB = -0.7 mA. TR2 (PNP); Tamb = 25 C. (1) (2) (3) (4) IB = -50 mA. IB = -45 mA. IB = -40 mA. IB = -35 mA. (5) (6) (7) (8) IB = -30 mA. IB = -25 mA. IB = -20 mA. IB = -15 mA. (9) IB = -10 mA. (10) IB = -5 mA. Fig.12 Collector current as a function of collector-emitter voltage; typical values. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 2003 Feb 20 8 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor PBSS4240DPN 103 handbook, halfpage RCEsat () 102 MHC470 10 (1) (2) 1 (3) 10-1 -10-1 -1 -10 -102 -103 -104 IC (mA) TR2 (PNP); IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.14 Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2003 Feb 20 9 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor PACKAGE OUTLINE Plastic surface mounted package; 6 leads PBSS4240DPN SOT457 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 c 1 2 3 Lp e bp wM B detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT457 REFERENCES IEC JEDEC EIAJ SC-74 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 2003 Feb 20 10 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION PBSS4240DPN This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Feb 20 11 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp12 Date of release: 2003 Feb 20 Document order number: 9397 750 10783 |
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